Phonon resonant effect in silicon membranes with different crystallographic orientations

نویسندگان

چکیده

Engineering low-frequency phonon transport in nanostructures with the resonant mechanism has become an important research direction. On basis of non-equilibrium molecular dynamics simulations, thermal pristine and Si-membranes bounded {100}, {110} {111} facets is investigated. It found that creation surfaces can introduce anisotropic due to lattice symmetry breaking. Besides, ballistic membranes lengths up 500 nm at low-frequencies a critical frequency mainly dependent on crystallographic orientation. Moreover, although surface resonances dramatically reduce conductivity all membranes, effect strongly relies membrane Among three studied orientations, maximized {111}-membrane, where tuned from largest one smallest among types by pillars. The large reduction {111}-membranes originated reduced spectral heat flux between 3 12 THz. Furthermore, coupling strength be interface vacancy pillars base material, which enhance intermediate range. Our work provides further insights engineering could useful for orientations resonances.

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ژورنال

عنوان ژورنال: International Journal of Heat and Mass Transfer

سال: 2022

ISSN: ['1879-2189', '0017-9310']

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2021.122144